Key Features
- Frequency Range 6 - 13 GHz
- Gain 13 dB
- Noise Figure 2.2 dB
- P1dB 29 dBm
- Psat 30 dBm
- compact size1.15 x 2 mm
Applications
- Radar
- Electronic Warfare
- Test Equipment
Architecture

ATEK153 Block Diagram
ATEK153 is a low noise amplifier fabricated on GaN process. Amplifier operation range covers 6 - 13 GHz. Due its process inherent features, amplifier can survive large RF input signal levels, which eliminates the need of lossy limiter circuitry usage at the amplifier input. This results in improved receiver noise figure and increased total system dynamic range. Amplifier has two Vgg pads, which allows user to choose the class of operation, dynamically depending on the scenario of operation. Under large RF input drive, amplifier can be biased for improved linearity to increase the overall system dynamic range. If the RF input signal is low, the amplifier can be biased for low power consumption to save power. Evaluation Board, bare die, custom package, and module options are available upon request.
Technical Specifications
| Parameter | Condition | Min | Typical | Max | Unit |
|---|---|---|---|---|---|
| Frequency Range | 6 | 13 | GHz | ||
| Gain | 6 GHz | 11.7 | dB | ||
| 8 GHz | 13.5 | dB | |||
| 10 GHz | 13 | dB | |||
| 12 GHz | 12 | dB | |||
| 13 GHz | 10 | dB | |||
| Noise Figure | 8 GHz | 2.4 | dB | ||
| 10 GHz | 2 | dB | |||
| 12 GHz | 2.2 | dB | |||
| 13 GHz | 2.5 | dB | |||
| Input Return Loss | -9 | dB | |||
| Output Return Loss | -12 | dB | |||
| Output P1dB | 29 | dBm | |||
| Psat | 31 | dBm | |||
| DC Supply Voltage | 5 | 20 | V | ||
| Operating Temperature | -40 | 85 | °C |
Available Resources
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