ATEK MIDAS — RF & Microwave IC Design

ATEK153

6 - 13 GHz GaN Low Noise Amplifier

Not publishedProduct Datasheet

Key Features

  • Frequency Range 6 - 13 GHz
  • Gain 13 dB
  • Noise Figure 2.2 dB
  • P1dB 29 dBm
  • Psat 30 dBm
  • compact size1.15 x 2 mm

Applications

  • Radar
  • Electronic Warfare
  • Test Equipment

Architecture

ATEK153 Block Diagram

ATEK153 Block Diagram

ATEK153 is a low noise amplifier fabricated on GaN process. Amplifier operation range covers 6 - 13 GHz. Due its process inherent features, amplifier can survive large RF input signal levels, which eliminates the need of lossy limiter circuitry usage at the amplifier input. This results in improved receiver noise figure and increased total system dynamic range. Amplifier has two Vgg pads, which allows user to choose the class of operation, dynamically depending on the scenario of operation. Under large RF input drive, amplifier can be biased for improved linearity to increase the overall system dynamic range. If the RF input signal is low, the amplifier can be biased for low power consumption to save power. Evaluation Board, bare die, custom package, and module options are available upon request.

Technical Specifications

ParameterConditionMinTypicalMaxUnit
Frequency Range613GHz
Gain6 GHz11.7dB
8 GHz13.5dB
10 GHz13dB
12 GHz12dB
13 GHz10dB
Noise Figure8 GHz2.4dB
10 GHz2dB
12 GHz2.2dB
13 GHz2.5dB
Input Return Loss-9dB
Output Return Loss-12dB
Output P1dB29dBm
Psat31dBm
DC Supply Voltage520V
Operating Temperature-4085°C

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